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Ni based silicides for 45 nm CMOS and beyond

โœ Scribed by Anne Lauwers; Jorge A. Kittl; Mark J.H. Van Dal; Oxana Chamirian; Malgorzata A. Pawlak; Muriel de Potter; Richard Lindsay; Toon Raymakers; Xavier Pages; Bencherki Mebarki; Tushar Mandrekar; Karen Maex


Book ID
103843128
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
644 KB
Volume
114-115
Category
Article
ISSN
0921-5107

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Ni- and Co-based silicides for advanced
โœ J.A. Kittl; A. Lauwers; O. Chamirian; M. Van Dal; A. Akheyar; M. De Potter; R. L ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 357 KB

The scaling behavior of Co, Co-Ni and Ni silicides to sub-40 nm gate length CMOS technologies with sub-100 nm junction depths was evaluated. Limitations were found for Co and Co-Ni alloy silicides, which exhibited an increase in sheet resistance at gate lengths below 40 nm and required high processi