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Negative-tone chemically-amplified resist development for high resolution hybrid lithography

✍ Scribed by S. Landis; S. Pauliac; R. Hanawa; M. Suetsugu; M. Akita

Book ID
113797604
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
289 KB
Volume
73-74
Category
Article
ISSN
0167-9317

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The electron beam exposure characteristics of two new Shipley DUV photoresists, UVIII and UVN have been investigated. UVIII is a positive resist which gives good linewidth control down to 100 nm lines and spaces with 60 nm features being possible at a dose of 40 I.tC/cm 2 and a beam voltage of 50 kV