High resolution electron beam lithography studies on Shipley chemically amplified DUV resists

✍ Scribed by D. Macintyre; S. Thoms

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 271 KB
• Volume: 35
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(96)00083-4

✦ Synopsis

The electron beam exposure characteristics of two new Shipley DUV photoresists, UVIII and UVN have been investigated. UVIII is a positive resist which gives good linewidth control down to 100 nm lines and spaces with 60 nm features being possible at a dose of 40 I.tC/cm 2 and a beam voltage of 50 kV. UVN is a negative resist with a sensitivity of 20 I.tC/cm 2 at 50 kV which gives much poorer dimensional control and has an ultimate resolution of 70 nm isolated lines or 140 nm lines and spaces.