High resolution electron beam lithograph
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D. Macintyre; S. Thoms
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Article
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1997
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Elsevier Science
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English
โ 271 KB
The electron beam exposure characteristics of two new Shipley DUV photoresists, UVIII and UVN have been investigated. UVIII is a positive resist which gives good linewidth control down to 100 nm lines and spaces with 60 nm features being possible at a dose of 40 I.tC/cm 2 and a beam voltage of 50 kV