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Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

✍ Scribed by Lin, Chung-Han; Merz, T. A.; Doutt, D. R.; Hetzer, M. J.; Joh, Jungwoo; del Alamo, JesuÌs A.; Mishra, U. K.; Brillson, L. J.

Book ID: 120075913
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 675 KB
Volume: 95
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3189102

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