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Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy

✍ Scribed by T. Batten; J. W. Pomeroy; M. J. Uren; T. Martin; M. Kuball

Book ID: 126514572
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 277 KB
Volume: 106
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3254197

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