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Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy

โœ Scribed by Kuball, M.; Hayes, J.M.; Uren, M.J.; Martin, I.; Birbeck, J.C.H.; Balmer, R.S.; Hughes, B.T.


Book ID
111903965
Publisher
IEEE
Year
2002
Tongue
English
Weight
89 KB
Volume
23
Category
Article
ISSN
0741-3106

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## Abstract We demonstrated activation annealing of Mgโ€doped pโ€type Al~0.17~Ga~0.83~N in different gases. The hole concentration of Al~0.17~Ga~0.83~N annealed in oxygen is higher than that annealed in nitrogen or air. A hole concentration of 1.3โ€‰ร—โ€‰10^16^โ€‰cm^โˆ’3^ at room temperature was achieved by a