High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient
✍ Scribed by Nagata, Kengo ;Ichikawa, Tomoki ;Takeda, Kenichiro ;Nagamatsu, Kentaro ;Iwaya, Motoaki ;Kamiyama, Satoshi ;Amano, Hiroshi ;Akasaki, Isamu
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 253 KB
- Volume
- 207
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
We demonstrated activation annealing of Mg‐doped p‐type Al~0.17~Ga~0.83~N in different gases. The hole concentration of Al~0.17~Ga~0.83~N annealed in oxygen is higher than that annealed in nitrogen or air. A hole concentration of 1.3 × 10^16^ cm^−3^ at room temperature was achieved by annealing in oxygen flow at 900 °C. Secondary ion mass spectroscopy shows that hydrogen dissociation from Mg‐doped Al~0.17~Ga~0.83~N is found to be enhanced by annealing in a flow of oxygen, compared with annealing in a flow of nitrogen. We confirmed the effect of activation annealing in oxygen flow on the performance of UV light‐emitting diode (LED). At a DC current of 100 mA, the output power of the LED annealed in oxygen flow at 900 °C is four times higher than that of the LED annealed in nitrogen flow at 800 °C.