## Abstract We evaluate the Al~__x__~ Ga~1β__x__~ N/GaN/Al~__y__~ Ga~1β__y__~ N double heterostructure (DH) for heterostructure fieldβeffect transistor applications, where the GaN quantum well is compressively strained on a relaxed crackβfree Al~__y__~ Ga~1β__y__~ N buffer layer, so that the Al con
β¦ LIBER β¦
Improved electrical properties of the two-dimensional electron gas in AlGaN/GaN heterostructures using high temperature AlN interlayers
β Scribed by JunShuai Xue; Yue Hao; JinCheng Zhang; JinYu Ni
- Book ID
- 107356634
- Publisher
- SP Science China Press
- Year
- 2010
- Tongue
- English
- Weight
- 634 KB
- Volume
- 53
- Category
- Article
- ISSN
- 1006-9321
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