The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content
β Scribed by JinFeng Zhang; Yue Hao; JinCheng Zhang; JinYu Ni
- Book ID
- 107357327
- Publisher
- Science in China Press (SCP)
- Year
- 2008
- Tongue
- English
- Weight
- 235 KB
- Volume
- 51
- Category
- Article
- ISSN
- 1674-733X
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## Abstract We evaluate the Al~__x__~ Ga~1β__x__~ N/GaN/Al~__y__~ Ga~1β__y__~ N double heterostructure (DH) for heterostructure fieldβeffect transistor applications, where the GaN quantum well is compressively strained on a relaxed crackβfree Al~__y__~ Ga~1β__y__~ N buffer layer, so that the Al con
AlGaN=GaN heterostructure devices have recently been attracting much attention because of their potential for microwave applications. Therefore, the electronic properties of a two-dimensional electron gas (2DEG) in AlGaN=GaN heterostructures have recently been discussed. In this paper, we have studi