The control of two-dimensional-electron-gas density and mobility in AlGaN/GaN heterostructures with Schottky gate
β Scribed by A. Asgari; M. Kalafi
- Book ID
- 108215961
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 192 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0928-4931
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## Abstract We evaluate the Al~__x__~ Ga~1β__x__~ N/GaN/Al~__y__~ Ga~1β__y__~ N double heterostructure (DH) for heterostructure fieldβeffect transistor applications, where the GaN quantum well is compressively strained on a relaxed crackβfree Al~__y__~ Ga~1β__y__~ N buffer layer, so that the Al con
AlGaN=GaN heterostructure devices have recently been attracting much attention because of their potential for microwave applications. Therefore, the electronic properties of a two-dimensional electron gas (2DEG) in AlGaN=GaN heterostructures have recently been discussed. In this paper, we have studi