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The influence of composition and unintentional doping on the two-dimensional electron gas density in AlGaN/GaN heterostructures

✍ Scribed by S. K. Davidsson; M. Gurusinghe; T. G. Andersson; H. Zirath

Book ID
107453243
Publisher
Springer US
Year
2004
Tongue
English
Weight
118 KB
Volume
33
Category
Article
ISSN
0361-5235

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## Abstract We evaluate the Al~__x__~ Ga~1–__x__~ N/GaN/Al~__y__~ Ga~1–__y__~ N double heterostructure (DH) for heterostructure field‐effect transistor applications, where the GaN quantum well is compressively strained on a relaxed crack‐free Al~__y__~ Ga~1–__y__~ N buffer layer, so that the Al con