✦ LIBER ✦

Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

✍ Scribed by R.M. Chu; Y.D. Zheng; Y.G. Zhou; P. Han; B. Shen; S.L. Gu

Publisher: Springer
Year: 2002
Tongue: English
Weight: 313 KB
Volume: 75
Category: Article
ISSN: 1432-0630
DOI: 10.1007/s003390100978

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Investigation for the Formation of Polar

Investigation for the Formation of Polarization-Induced Two-Dimensional Electron Gas in AlGaN/GaN Heterostructure Field Effect Transistors

✍ H.W. Jang; C.M. Jeon; K.H. Kim; J.K. Kim; S.-B. Bae; J.-H. Lee; J.W. Choi; J.-L. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 84 KB 👁 2 views

Theoretical study of improved two-dimens

Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure

✍ Kong, Y. C. ;Chu, R. M. ;Zheng, Y. D. ;Zhou, C. H. ;Shen, B. ;Gu, S. L. ;Zhang, 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 287 KB

## Abstract We evaluate the Al~__x__~ Ga~1–__x__~ N/GaN/Al~__y__~ Ga~1–__y__~ N double heterostructure (DH) for heterostructure field‐effect transistor applications, where the GaN quantum well is compressively strained on a relaxed crack‐free Al~__y__~ Ga~1–__y__~ N buffer layer, so that the Al con

Gate voltage dependence of subband struc

Gate voltage dependence of subband structure in a two-dimensional electron gas in AlGaN/GaN heterostructures

✍ K Tsubaki; N Maeda; T Saitoh; T Nishida; N Kobayashi 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 133 KB

AlGaN=GaN heterostructure devices have recently been attracting much attention because of their potential for microwave applications. Therefore, the electronic properties of a two-dimensional electron gas (2DEG) in AlGaN=GaN heterostructures have recently been discussed. In this paper, we have studi

MOCVD Growth and Transport Investigation

MOCVD Growth and Transport Investigation of Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures on Sapphire Substrates

✍ T. Wang; Y. Ohno; M. Lachab; D. Nakagawa; T. Shirahama; S. Sakai; H. Ohno 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 156 KB 👁 2 views

Transport properties of the two-dimensio

Transport properties of the two-dimensional electron gas in GaN/AlGaN heterostructures grown by ammonia molecular-beam epitaxy

✍ Pogosov, A. G. ;Budantsev, M. V. ;Lavrov, R. A. ;Mansurov, V. G. ;Nikitin, A. Yu 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 184 KB

## Abstract Transport properties of the two‐dimensional electron gas in AlGaN/GaN heterostructures grown by ammonia molecular‐beam epitaxy are experimentally investigated. Conventional Hall and Shubnikov–de Haas measurements as well as investigations of quantum transport phenomena are reported. It

The behavior of two-dimensional electron

The behavior of two-dimensional electron gas in GaN/AlxGa1−xN/GaN heterostructures with very thin AlxGa1−xN barriers

✍ M. Kalafi; A. Asgari 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 187 KB

The behavior of two-dimensional electron gas density, induced by spontaneous and piezoelectric polarization, in non-intentionally doped GaN=AlxGa1-xN=GaN heterostructures with very thin barriers has been studied. The sheet carrier concentration, Ns, induced by polarization charges was determined sel