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Mobility of two-dimensional electrons in an AlGaN/GaN modulation-doped heterostructure

✍ Scribed by Gökden, Sibel

Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
283 KB
Volume
200
Category
Article
ISSN
0031-8965

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## Abstract We evaluate the Al~__x__~ Ga~1–__x__~ N/GaN/Al~__y__~ Ga~1–__y__~ N double heterostructure (DH) for heterostructure field‐effect transistor applications, where the GaN quantum well is compressively strained on a relaxed crack‐free Al~__y__~ Ga~1–__y__~ N buffer layer, so that the Al con