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Energy Relaxation by Warm Two-Dimensional Electrons in a GaN/AlGaN Heterostructure

✍ Scribed by N.M. Stanton; A.J. Kent; S.A. Cavill; A.V. Akimov; K.J. Lee; J.J. Harris; T. Wang; S. Sakai


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
96 KB
Volume
228
Category
Article
ISSN
0370-1972

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Resistivity and Hall effect measurements were carried out as a function of magnetic field (0-1.5 T) and temperature (30-300 K) for Al 0.88 In 0.12 N/AlN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (MOCVD). Magnetic field dependent Hall data were analyzed by using the qu