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Ferroelectric polarization-controlled two-dimensional electron gas in ferroelectric/AlGaN/GaN heterostructure

✍ Scribed by Y. C. Kong; F. S. Xue; J. J. Zhou; L. Li; C. Chen; Y. R. Li


Publisher
Springer
Year
2008
Tongue
English
Weight
337 KB
Volume
95
Category
Article
ISSN
1432-0630

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## Abstract We evaluate the Al~__x__~ Ga~1–__x__~ N/GaN/Al~__y__~ Ga~1–__y__~ N double heterostructure (DH) for heterostructure field‐effect transistor applications, where the GaN quantum well is compressively strained on a relaxed crack‐free Al~__y__~ Ga~1–__y__~ N buffer layer, so that the Al con