## Abstract We evaluate the Al~__x__~ Ga~1β__x__~ N/GaN/Al~__y__~ Ga~1β__y__~ N double heterostructure (DH) for heterostructure fieldβeffect transistor applications, where the GaN quantum well is compressively strained on a relaxed crackβfree Al~__y__~ Ga~1β__y__~ N buffer layer, so that the Al con
β¦ LIBER β¦
Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures
β Scribed by Y.C. Kong; Y.D. Zheng; C.H. Zhou; S.L. Gu; R. Zhang; P. Han; Y. Shi; R.L. Jiang
- Publisher
- Springer
- Year
- 2006
- Tongue
- English
- Weight
- 610 KB
- Volume
- 84
- Category
- Article
- ISSN
- 1432-0630
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