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Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures

✍ Scribed by Y.C. Kong; Y.D. Zheng; C.H. Zhou; S.L. Gu; R. Zhang; P. Han; Y. Shi; R.L. Jiang


Publisher
Springer
Year
2006
Tongue
English
Weight
610 KB
Volume
84
Category
Article
ISSN
1432-0630

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## Abstract We evaluate the Al~__x__~ Ga~1–__x__~ N/GaN/Al~__y__~ Ga~1–__y__~ N double heterostructure (DH) for heterostructure field‐effect transistor applications, where the GaN quantum well is compressively strained on a relaxed crack‐free Al~__y__~ Ga~1–__y__~ N buffer layer, so that the Al con

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Resistivity and Hall effect measurements were carried out as a function of magnetic field (0-1.5 T) and temperature (30-300 K) for Al 0.88 In 0.12 N/AlN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (MOCVD). Magnetic field dependent Hall data were analyzed by using the qu