High temperature dependence of the density of two-dimensional electron gas in Al0.18Ga0.82N/GaN heterostructures
โ Scribed by M.J. Wang; B. Shen; F.J. Xu; Y. Wang; J. Xu; S. Huang; Z.J. Yang; K. Xu; G.Y. Zhang
- Publisher
- Springer
- Year
- 2007
- Tongue
- English
- Weight
- 224 KB
- Volume
- 88
- Category
- Article
- ISSN
- 1432-0630
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Resistivity and Hall effect measurements were carried out as a function of magnetic field (0-1.5 T) and temperature (30-300 K) for Al 0.88 In 0.12 N/AlN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (MOCVD). Magnetic field dependent Hall data were analyzed by using the qu
The two-dimensional electron gas (2DEG) transport properties of two-step growth undoped Al 0.25 Ga 0.75 N/GaN heterostructures with semi-insulating buffer, grown by MOCVD, were investigated in a temperature range of 20-350 K. Using the quantitative mobility spectrum analysis (QMSA) method, it was sh
The voltage (V) and frequency (f) dependence of dielectric characteristics such as dielectric constant (e 0 ), dielectric loss (e 00 ), dielectric loss tangent (tan d) and real and imaginary part of electrical modulus (V 0 and M 00 ) of the (Ni/Au)/GaN/Al 0.3 Ga 0.7 N heterostructures have been inve