To clarify the subband profile of nitride quantum structures, we performed photoluminescence excitation spectrum measurements of GaN/Al 0.15 Ga 0.85 N multiquantum well structures grown by metalorganic vapor phase epitaxy on an on-axis 6H-SiC(0001) Si substrate. Clear absorption due to the ground st
β¦ LIBER β¦
Photoconductivity Studies of Al0.18Ga0.82N/GaN Single Heterostructure
β Scribed by Niehus, M. ;Schwarz, R. ;Koynov, S. ;Sanguino, P. ;Heuken, M. ;Meyer, B.K.
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 216 KB
- Volume
- 188
- Category
- Article
- ISSN
- 0031-8965
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