Electronic properties of two-dimensional electron gas in pseudomorphic InxGa1−xAs/N-In0.52Al0.48As heterostructures
✍ Scribed by S. Sasa; Y. Nakata; Y. Sugiyama; T. Fujii; E. Miyauchi
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 326 KB
- Volume
- 95
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Resistivity and Hall effect measurements were carried out as a function of magnetic field (0-1.5 T) and temperature (30-300 K) for Al 0.88 In 0.12 N/AlN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (MOCVD). Magnetic field dependent Hall data were analyzed by using the qu
We observed that a series of peaks, which were clearly extracted from a photocurrent difference spectrum, corresponded to interband optical transitions of an In 0.53 Ga 0.47 As/ In 0.52 Al 0.48 As multi-quantum wells structure. The nonparabolic tendency of the electron effective mass was suggested f