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Photoluminescence Excitation Spectrum Study on GaN/Al0.15Ga0.85N MQWs

✍ Scribed by T. Nishida; M. Kumagai; H. Ando; N. Kobayashi

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 115 KB
Volume: 216
Category: Article
ISSN: 0370-1972
DOI: 10.1002/(sici)1521-3951(199911)216:1<233::aid-pssb233>3.0.co;2-3

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✦ Synopsis

To clarify the subband profile of nitride quantum structures, we performed photoluminescence excitation spectrum measurements of GaN/Al 0.15 Ga 0.85 N multiquantum well structures grown by metalorganic vapor phase epitaxy on an on-axis 6H-SiC(0001) Si substrate. Clear absorption due to the ground state is confirmed. Further, two types of absorption related to the excited states of the nitride quantum wells are found.

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