Band offsets in In0.15Ga0.85As/ GaAs and In0.15Ga0.85As/Al0.15Ga0.85As studied by photoluminescence and cathodoluminescence
โ Scribed by E.M. Goldys; H.Y. Zuo; T.L. Tansley; M.R. Phillips; C.M. Contessa
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 67 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0749-6036
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๐ SIMILAR VOLUMES
To clarify the subband profile of nitride quantum structures, we performed photoluminescence excitation spectrum measurements of GaN/Al 0.15 Ga 0.85 N multiquantum well structures grown by metalorganic vapor phase epitaxy on an on-axis 6H-SiC(0001) Si substrate. Clear absorption due to the ground st
Comparison of BCP error with current and charge density distribution errors in the benchmark geometry has been carried out using the benchmark solutions and error metric for surface currents [8]. A correlation of BCP error with near-field electromagnetic characterization of the problem has been show