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Assessment of stress contributions in GaN high electron mobility transistors of differing substrates using Raman spectroscopy

✍ Scribed by Beechem, Thomas; Christensen, Adam; Green, D. S.; Graham, Samuel

Book ID: 120285127
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 754 KB
Volume: 106
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3267157

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