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Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors

✍ Scribed by Choi, Sukwon; Heller, Eric; Dorsey, Donald; Vetury, Ramakrishna; Graham, Samuel

Book ID: 119993964
Publisher: American Institute of Physics
Year: 2013
Tongue: English
Weight: 1006 KB
Volume: 113
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.4794009

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