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A study on multiple defect states in low-carbon doped GaN layers and its correlation with AlGaN/GaN high electron mobility transistor operation

✍ Scribed by Tanaka, Takeshi; Shiojima, Kenji; Otoki, Yohei; Tokuda, Yutaka


Book ID
121669703
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
542 KB
Volume
557
Category
Article
ISSN
0040-6090

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