Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane

✍ Scribed by M. J. Edwards; E. D. Le Boulbar; S. Vittoz; G. Vanko; K. Brinkfeldt; L. Rufer; P. Johander; T. Lalinský; C. R. Bowen; D. W. E. Allsopp

• Book ID: 112182261
• Publisher: John Wiley and Sons
• Year: 2012
• Tongue: English
• Weight: 294 KB
• Volume: 9
• Category: Article
• ISSN: 1862-6351
• DOI: 10.1002/pssc.201100371