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Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor

✍ Scribed by Le Boulbar, E.D.; Edwards, M.J.; Vittoz, S.; Vanko, G.; Brinkfeldt, K.; Rufer, L.; Johander, P.; Lalinský, T.; Bowen, C.R.; Allsopp, D.W.E.

Book ID
122433120
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
621 KB
Volume
194
Category
Article
ISSN
0924-4247

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## Abstract AlGaN/GaN high electron mobility transistors (HEMTs) show great promise for the realization of sensors for biomolecular, pharmaceutical and medical purposes. The high sensitivity and the stability in biological solutions are great advantages of this approach. Therefore, we created a nov