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MOSFET global modeling for deep submicron devices with a modified BSIM1 SPICE model

โœ Scribed by Imam, M.A.; Osman, M.A.; Osman, A.A.


Book ID
119778046
Publisher
IEEE
Year
1996
Tongue
English
Weight
539 KB
Volume
15
Category
Article
ISSN
0278-0070

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A fringing-capacitance model for deep-su
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An analytical model of fringing capacitances for deep-submicron MOSFET with high-k gate dielectric, including gate dielectric fringing-capacitance and gate electrode fringing-capacitance, is obtained by the conformal-mapping transformation method. It is demonstrated that the fringing-capacitance eff