A fringing-capacitance model for deep-su
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F. Ji; J.P. Xu; P.T. Lai; J.G. Guan
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Article
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2008
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Elsevier Science
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English
โ 189 KB
An analytical model of fringing capacitances for deep-submicron MOSFET with high-k gate dielectric, including gate dielectric fringing-capacitance and gate electrode fringing-capacitance, is obtained by the conformal-mapping transformation method. It is demonstrated that the fringing-capacitance eff