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[IEEE 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Xian, China (2012.10.29-2012.11.1)] 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology - A compact model for the STI y-stress effect on deep submicron PDSOI MOSFETs

✍ Scribed by Bu, Jianhui; Bi, Jinshun; Ma, Xianjun; Luo, Jiajun; Han, Zhengsheng; Cai, Haogang

Book ID: 120262536
Publisher: IEEE
Year: 2012
Weight: 246 KB
Category: Article
ISBN: 1467324736
DOI: 10.1109/ICSICT.2012.6466735

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