A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric

✍ Scribed by F. Ji; J.P. Xu; P.T. Lai; J.G. Guan

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 189 KB
• Volume: 48
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/j.microrel.2008.01.007

✦ Synopsis

An analytical model of fringing capacitances for deep-submicron MOSFET with high-k gate dielectric, including gate dielectric fringing-capacitance and gate electrode fringing-capacitance, is obtained by the conformal-mapping transformation method. It is demonstrated that the fringing-capacitance effect is enhanced as the thickness of gate electrode or the dielectric constant of either gate dielectric or sidewall spacer increases. Moreover, the influence of fringing-capacitance on threshold voltage is demonstrated.