✦ LIBER ✦
Study of gate dielectric permittivity variation with different equivalent oxide thickness on channel engineered deep sub-micrometer n-MOSFET device for mixed signal applications
✍ Scribed by A. Srivastava; Partha Sarkar; Chandan Kumar Sarkar
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 222 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0026-2714
No coin nor oath required. For personal study only.