A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric

✍ Scribed by C.H. Fu; K.S. Chang-Liao; Y.A. Chang; Y.Y. Hsu; T.H. Tzeng; T.K. Wang; D.W. Heh; P.Y. Gu; M.J. Tsai

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 779 KB
• Volume: 88
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2011.03.073