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[IEEE Proceedings 1998 IEEE Hong Kong Electron Devices Meeting - Hong Kong (1998.08.29-1998.08.29)] Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) - A predictive semi-analytical threshold voltage model for deep-submicron MOSFET's

✍ Scribed by Lim, K.Y.; Zhou, X.; Lim, D.; Zu, Y.; Ho, H.M.; Loiko, K.; Lau, C.K.; Tse, M.S.; Choo, S.C.

Book ID: 126664393
Publisher: IEEE
Year: 1998
Weight: 238 KB
Category: Article
ISBN-13: 9780780349322
DOI: 10.1109/HKEDM.1998.740200

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