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[IEEE 2000 IEEE Hong Kong Electron Devices Meeting - Hong Kong, China (24 June 2000)] Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) - A new RF capacitance method to extract the effective channel length of MOSFET's using S-parameters

✍ Scribed by Seonghearn Lee,

Book ID: 120288857
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 248 KB
Edition: 2000 ed.
Category: Article
ISBN-13: 9780780363045
DOI: 10.1109/HKEDM.2000.904215

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