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[IEEE Proceedings 1998 IEEE Hong Kong Electron Devices Meeting - Hong Kong (1998.08.29-1998.08.29)] Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) - A comparison between NO-annealed O/sub 2/- and N/sub 2/O-grown gate dielectrics

✍ Scribed by Lai, P.T.; Xu, J.P.; Cheng, Y.C.

Book ID: 126767357
Publisher: IEEE
Year: 1998
Weight: 287 KB
Category: Article
ISBN-13: 9780780349322
DOI: 10.1109/HKEDM.1998.740183

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