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A unified triode/saturation model with an improved continuity in the output conductance suitable for CAD of VLSI circuits using deep sub-0.1 μm NMOS devices

✍ Scribed by Chen, Y.G.; Kuo, J.B.


Book ID
119778035
Publisher
IEEE
Year
1996
Tongue
English
Weight
349 KB
Volume
15
Category
Article
ISSN
0278-0070

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