✦ LIBER ✦

Monitoring of carrier lifetime distribution in high power semiconductor device technology

✍ Scribed by J. Kozisek; Z. Machacek; V. Benda

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 898 KB
Volume: 39
Category: Article
ISSN: 0026-2692
DOI: 10.1016/j.mejo.2007.11.015

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Minority carrier lifetime control in pow

Minority carrier lifetime control in power semiconductor devices by fast neutron irradiation

✍ Zhang Bin; Chen Yongqi; Wang Peiqing; Wang Dongguang 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 329 KB

A new technology for controlling reduction of minority carrier lifetime of power semiconductor devices was given in this paper, using fast neutron irradiation in nuclear reactor. The effects of high frequency thyristor by fast neutron irradiation is mainly discussed. Furthermore, a comparison is ma

4564807 Method of judging carrier lifeti

4564807 Method of judging carrier lifetime in semiconductor devices

✍ Hiroyuk Ikezi; RichardL Freeman 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 171 KB

The effect of nonlinear coupling of reci

The effect of nonlinear coupling of reciprocal mobilities on the charge carrier distribution in semiconductor power devices

✍ D. Reznik; W. Gerlach 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 423 KB

Simulation of the transient temperature

Simulation of the transient temperature distribution in a high-power semiconductor device cooling apparatus using heat pipes

✍ Suzuki, Osamu ;Fujioka, Kazumasa ;Kuwahara, Heikichi ;Takasaki, Toshio 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 541 KB

Quantification of thermoreflectance temp

Quantification of thermoreflectance temperature measurements in high-power semiconductor devices—lasers and laser bars

✍ K. Pierściński; D. Pierścińska; M. Bugajski 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 546 KB

Absolute measurement of transient carrie

Absolute measurement of transient carrier concentration and temperature gradients in power semiconductor devices by internal IR-laser deflection

✍ G. Deboy; G. Sölkner; E. Wolfgang; W. Claeys 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 503 KB