✦ LIBER ✦

The effect of nonlinear coupling of reciprocal mobilities on the charge carrier distribution in semiconductor power devices

✍ Scribed by D. Reznik; W. Gerlach

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 423 KB
Volume: 38
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(94)00103-m

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Influence of non-constant carrier mobili

Influence of non-constant carrier mobility on the charge transport time in semiconductor detectors

✍ K. Falk; P.A. Tove; M. Madakbas 📂 Article 📅 1965 🏛 Elsevier Science ⚖ 222 KB

Investigation of the effect of electron-

Investigation of the effect of electron-hole scattering on charge carrier transport in semiconductors and semiconductor devices under low injection conditions

✍ T.T. Mnatsakanov; B.N. Gresserov; L.I. Pomortseva 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 997 KB

Effect of electron-electron interactions

Effect of electron-electron interactions on the ionization rate of charge carriers in semiconductors

✍ R. Ghosh; S.K. Roy 📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 358 KB

The effect of ambients on the charge den

The effect of ambients on the charge density and carrier mobility in a silicon-silicon dioxide interface

✍ R.Y. Deshpande 📂 Article 📅 1965 🏛 Elsevier Science 🌐 English ⚖ 474 KB

Effect of impact ionization on the satur

Effect of impact ionization on the saturated drift velocity of charge carriers in semiconductors at high electric field

✍ S.K. Roy; R. Ghosh 📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 279 KB

The effect of accumulated dose on the li

The effect of accumulated dose on the lifetime of the highly mobile positive charge carriers formed in irradiated cyclohexane and trans-decalin

✍ Oleg A. Anisimov; John M. Warman; Matthijs P. De Haas; Henk De Leng 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 392 KB

The lifetimes of the highly mobile positive ions formed on ionization of cyclohexane and transdecalin solvents are extremely sensitive to radiation dose due to build up of reactive products. In cyclohexane a radiation dose of 2 x 10' J m-3 reduces the halflife to less than 50 ns mainly due to build-