Minority carrier lifetime control in power semiconductor devices by fast neutron irradiation
✍ Scribed by Zhang Bin; Chen Yongqi; Wang Peiqing; Wang Dongguang
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 329 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0969-806X
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✦ Synopsis
A new technology for controlling reduction of minority carrier lifetime of power semiconductor devices was given in this paper, using fast neutron irradiation in nuclear reactor.
The effects of high frequency thyristor by fast neutron irradiation is mainly discussed. Furthermore, a comparison is made with electron irradiated, 60Co-Gamma irradiated and gold diffused devices. The conclusion shows, the trade-off of forward voltage drop and turn-off time of fast neutron irradiated deveices is alike with gold diffused devices, while the leakage current is less than that of gold diffused devices, and not different from the electron or Gamma irradiated devices. Moreover, the deep energy levels of fast neutron irradiation in silicon was shown in this paper, and a single dominant level of Ec-O.44eV is identified for controlling minority carrier lifetime.