✦ LIBER ✦

Modeling and simulation of the lag effect in a deep reactive ion etching process

✍ Scribed by Tan, Yiyong; Zhou, Rongchun; Zhang, Haixia; Lu, Guizhang; Li, Zhihong

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Simulation of Semiconductor Processes an

✍ Grasser, Tibor; Selberherr, Siegfried 📂 Article 📅 2007 🏛 Springer Vienna ⚖ 280 KB

Shallow and deep dry etching of silicon

✍ Ü. Sökmen; A. Stranz; S. Fündling; S. Merzsch; R. Neumann; H.-H. Wehmann; E. Pei 📂 Article 📅 2010 🏛 Springer-Verlag 🌐 English ⚖ 969 KB

Effect of SF 6 flow rate on the etched s

✍ Dixit, Pradeep; Miao, Jianmin 📂 Article 📅 2006 🏛 Institute of Physics 🌐 English ⚖ 260 KB

Effect of process parameters on the surf

✍ Kuo-Shen Chen, ; Ayon, A.A.; Xin Zhang, ; Spearing, S.M. 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 442 KB

Reactive ion etching of deep trenches in

✍ G Wöhl; M Matthes; A Weisheit 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 508 KB

Modeling of deep grooving of silicon in

✍ A. S. Shumilov; I. I. Amirov 📂 Article 📅 2007 🏛 Springer 🌐 English ⚖ 571 KB