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Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy

✍ Scribed by Benjamin A. Haskell; Arpan Chakraborty; Feng Wu; Hideo Sasano; Paul T. Fini; Steven P. Denbaars; James S. Speck; Shuji Nakamura


Book ID
107453402
Publisher
Springer US
Year
2005
Tongue
English
Weight
337 KB
Volume
34
Category
Article
ISSN
0361-5235

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Red luminescence from freestanding GaN g
✍ Wang, Lijun ;Richter, E. ;Weyers, M. πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 171 KB

## Abstract Photoluminescence (PL) spectroscopy was used to study the red luminescence band from freestanding GaN grown on LiAlO~2~ substrate by hydride vapor phase epitaxy. The red luminescence band was observed with its peak at 1.78 eV and 1.85 eV at 10 K and 300 K, respectively. Temperature‐depe