## Abstract Photoluminescence (PL) spectroscopy was used to study the red luminescence band from freestanding GaN grown on LiAlO~2~ substrate by hydride vapor phase epitaxy. The red luminescence band was observed with its peak at 1.78 eV and 1.85 eV at 10 K and 300 K, respectively. Temperatureβdepe
β¦ LIBER β¦
Studies about wafer bow of freestanding GaN substrates grown by hydride vapor phase epitaxy
β Scribed by F. Lipski; M. Klein; X. Yao; F. Scholz
- Book ID
- 116630068
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 374 KB
- Volume
- 352
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Red luminescence from freestanding GaN g
β
Wang, Lijun ;Richter, E. ;Weyers, M.
π
Article
π
2007
π
John Wiley and Sons
π
English
β 171 KB
Self-Separation of Freestanding GaN from
β
Tomita, K. ;Kachi, T. ;Nagai, S. ;Kojima, A. ;Yamasaki, S. ;Koike, M.
π
Article
π
2002
π
John Wiley and Sons
π
English
β 153 KB
π 2 views
Freestanding GaN wafers were produced by a newly developed self-separation method. Thick GaN layers were grown using hydride vapor phase epitaxy on a sapphire substrate with GaN seeds. The separation of the thick GaN layers took place during the growth sequence at the interface of GaN/sapphire, beca
Fabrication of Freestanding GaN Wafers b
β
Oshima, Y. ;Eri, T. ;Shibata, M. ;Sunakawa, H. ;Usui, A.
π
Article
π
2002
π
John Wiley and Sons
π
English
β 114 KB
π 2 views
Freestanding high quality GaN substrate
β
Chao, C. L.; Chiu, C. H.; Lee, Y. J.; Kuo, H. C.; Liu, Po-Chun; Tsay, Jeng Dar;
π
Article
π
2009
π
American Institute of Physics
π
English
β 587 KB
Photoluminescence studies of GaN layers
β
Yu, P. W.; Park, C. S.; Kim, S. T.
π
Article
π
2001
π
American Institute of Physics
π
English
β 306 KB
Dynamics of bound excitons versus thickn
β
Pozina, G.; Hemmingsson, C.; Bergman, J. P.; Trinh, D.; Hultman, L.; Monemar, B.
π
Article
π
2007
π
American Institute of Physics
π
English
β 371 KB