𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Studies about wafer bow of freestanding GaN substrates grown by hydride vapor phase epitaxy

✍ Scribed by F. Lipski; M. Klein; X. Yao; F. Scholz


Book ID
116630068
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
374 KB
Volume
352
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Red luminescence from freestanding GaN g
✍ Wang, Lijun ;Richter, E. ;Weyers, M. πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 171 KB

## Abstract Photoluminescence (PL) spectroscopy was used to study the red luminescence band from freestanding GaN grown on LiAlO~2~ substrate by hydride vapor phase epitaxy. The red luminescence band was observed with its peak at 1.78 eV and 1.85 eV at 10 K and 300 K, respectively. Temperature‐depe

Self-Separation of Freestanding GaN from
✍ Tomita, K. ;Kachi, T. ;Nagai, S. ;Kojima, A. ;Yamasaki, S. ;Koike, M. πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 153 KB πŸ‘ 2 views

Freestanding GaN wafers were produced by a newly developed self-separation method. Thick GaN layers were grown using hydride vapor phase epitaxy on a sapphire substrate with GaN seeds. The separation of the thick GaN layers took place during the growth sequence at the interface of GaN/sapphire, beca