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Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy

✍ Scribed by Pozina, G.; Hemmingsson, C.; Bergman, J. P.; Trinh, D.; Hultman, L.; Monemar, B.

Book ID: 126836527
Publisher: American Institute of Physics
Year: 2007
Tongue: English
Weight: 371 KB
Volume: 90
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2743950

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