Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy
β Scribed by Skromme, B. J.; Jayapalan, J.; Vaudo, R. P.; Phanse, V. M.
- Book ID
- 121209635
- Publisher
- American Institute of Physics
- Year
- 1999
- Tongue
- English
- Weight
- 390 KB
- Volume
- 74
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.123850
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
We report on time-integrated and time-resolved photoluminescence (PL) measurements in 80 mm thick GaN layers grown by hydride vapor phase epitaxy on sapphire substrates. The PL spectra are dominated by free exciton transitions and by three well-resolved emissions assigned to the neutral-donor-bound
Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons, the donor and the acceptors we