✦ LIBER ✦
Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
✍ Scribed by Iwaya, Motoaki; Takeuchi, Tetsuya; Yamaguchi, Shigeo; Wetzel, Christian; Amano, Hiroshi; Akasaki, Isamu
- Book ID
- 123617105
- Publisher
- Institute of Pure and Applied Physics
- Year
- 1998
- Tongue
- English
- Weight
- 180 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0021-4922
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