Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy

✍ Scribed by Paskova, T.; Hommel, D.; Paskov, P. P.; Darakchieva, V.; Monemar, B.; Bockowski, M.; Suski, T.; Grzegory, I.; Tuomisto, F.; Saarinen, K.; Ashkenov, N.; Schubert, M.

• Book ID: 121731396
• Publisher: American Institute of Physics
• Year: 2006
• Tongue: English
• Weight: 419 KB
• Volume: 88
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.2192149