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Effect of sapphire-substrate thickness on the curvature of thick GaN films grown by hydride vapor phase epitaxy

✍ Scribed by Paskova, T.; Becker, L.; Böttcher, T.; Hommel, D.; Paskov, P. P.; Monemar, B.

Book ID
125853589
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
546 KB
Volume
102
Category
Article
ISSN
0021-8979

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Flow Modulation Growth of Thick GaN by H
Flow Modulation Growth of Thick GaN by Hydride Vapor Phase Epitaxy
✍ Zhang, W. ;Riemann, T. ;Alves, H.R. ;Heuken, M. ;Veit, P. ;Pfisterer, D. ;Hofman 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 99 KB 👁 2 views

We demonstrate in this work the effects of flow modulation on the crystalline quality and morphology of GaN epilayers grown by hydride vapor phase epitaxy. The improvement in the structural qualtiy is attributed to the strain relaxation, dislocations suppression and enhanced Ga diffusion.