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High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates

✍ Scribed by Martin, D.; Napierala, J.; Ilegems, M.; Butté, R.; Grandjean, N.


Book ID
121659550
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
362 KB
Volume
88
Category
Article
ISSN
0003-6951

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Self-Separation of Freestanding GaN from
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Freestanding GaN wafers were produced by a newly developed self-separation method. Thick GaN layers were grown using hydride vapor phase epitaxy on a sapphire substrate with GaN seeds. The separation of the thick GaN layers took place during the growth sequence at the interface of GaN/sapphire, beca