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Nucleation of GaN on sapphire substrates at intermediate temperatures by Hydride Vapor Phase Epitaxy

✍ Scribed by G. Lukin; C. Röder; E. Niederschlag; Y. Shashev; U. Mühle; O. Pätzold; J. Kortus; D. Rafaja; M. Stelter

Book ID
112069564
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
540 KB
Volume
47
Category
Article
ISSN
0232-1300

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Self-Separation of Freestanding GaN from
Self-Separation of Freestanding GaN from Sapphire Substrates by Hydride Vapor Phase Epitaxy
✍ Tomita, K. ;Kachi, T. ;Nagai, S. ;Kojima, A. ;Yamasaki, S. ;Koike, M. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 153 KB 👁 2 views

Freestanding GaN wafers were produced by a newly developed self-separation method. Thick GaN layers were grown using hydride vapor phase epitaxy on a sapphire substrate with GaN seeds. The separation of the thick GaN layers took place during the growth sequence at the interface of GaN/sapphire, beca