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Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy

✍ Scribed by Chao, C. L.; Chiu, C. H.; Lee, Y. J.; Kuo, H. C.; Liu, Po-Chun; Tsay, Jeng Dar; Cheng, S. J.

Book ID: 121480139
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 587 KB
Volume: 95
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3195684

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